Since 2007, Hmois Sic Research lab has begun it's researches in Sic single crystal materials with an investment of over 200 million RMB, HMOIS owns the whole R&D product line for Sic material ranging from Silicon carbide power perparation, crystal growth, wafer processing to epitaxial testing, capable of an annual output of 2 tons of high purity silion carbide power and 3000pcs of high purity semi-insulating wafer, largely promoting the development of the domestic smiconductor materials. Supported by relevant national ministries and foreign professional experts from sweden, germany. Russian and Ukraine over years research efforts, Hmois have successfully created HMOIS products series.
